Light-emitting device and method of forming the same

US10121822B2 · kind B2 · utility

Assignee

• Nanyang Technological University · SG

Inventors

• Xueliang Zhang · Singapore, SG
• Zi-Hui Zhang · Singapore, SG
• Yun-Hyuck Ji · Seojong-myeon, KR
• Zhen Gang Ju · Singapore, SG
• Wei Liu · Beijing, CN
• Swee Tiam Tan · Singapore, SG
• Xiaowei Sun · Jiaocheng District, CN
• Hilmi Volkan Demir · Singapore, SG

Key dates

• Filing date: Nov 18, 2014
• Grant date: Nov 6, 2018
• Expiry date: Dec 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/032

Abstract

A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.