Thin film transistor substrate and display using the same
US10121899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2016 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Feb 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode and a first drain electrode; a first gate insulating layer between the polycrystalline semiconductor layer and the first gate electrode; a second thin film transistor disposed having an oxide semiconductor layer on the first gate electrode, a second gate electrode on the oxide semiconductor layer, a second source electrode and a second drain electrode; an intermediate insulating layer disposed on the first gate electrode and under the oxide semiconductor layer; and a second gate insulating layer on the intermediate insulating layer and under the first source electrode, the first drain electrode and the second gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.