Semiconductor photomultiplier and a process of manufacturing a photomultiplier microcell
US10121928B2 · kind B2 · utility
0Cited by
4References
29Claims
0Family size
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Key dates
| Filing date | Jul 1, 2014 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Aug 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
The present disclosure relates to a process of manufacturing a photomultiplier microcell. The process comprises providing an insulating layer over an active region; and implanting a dopant through the insulating layer to form a photosensitive diode in the active region. The insulating layer once formed is retained over the active region throughout the manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.