Semiconductor device and the manufacturing method thereof
US10121933B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Mar 24, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially growing a reaction layer on the semiconductor substrate; and epitaxially growing a buffer layer on the reaction layer; wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a dislocation density of the buffer layer is smaller than smaller than 1*109 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.