Patent · US Active

Method for manufacturing semiconductor light emitting device package

US10121934B2 · kind B2 · utility

0Cited by
40References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 9, 2015
Grant dateNov 6, 2018
Priority date
Expiry dateJan 25, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0361

Abstract

There is provided a method for manufacturing a semiconductor light emitting device package including steps of disposing a plurality of light emitting structures on a support substrate, each light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, shaping a mixture containing a wavelength conversion material and a glass composition on the plurality of light emitting structures, sintering the mixture to form a wavelength conversion part, removing the support substrate, and cutting the plurality of light emitting structures into individual device units.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.