Patent · US Active

Light-emitting device substrate, light-emitting device, and method for producing light-emitting device substrate

US10121951B2 · kind B2 · utility

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Key dates

Filing dateNov 12, 2014
Grant dateNov 6, 2018
Priority date
Expiry dateNov 12, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0365
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In a light-emitting device substrate (2), a light reflecting surface covered with an anodized aluminum layer (12) is formed on one side of a base (14), and a glass-based insulator layer (11) and electrode patterns (5⋅6) disposed on the first insulating layer (11) are formed on the one side of the base (14) in a region not covered with the anodized aluminum layer (12). A glass-based insulator layer (13) is formed at least on the other side of the base (14) that is opposite the one side of the base (14). Therefore, a light-emitting device substrate having high reflectivity, high heat dissipation capability, dielectric withstand capability, and long-term reliability and excellent in mass productivity can be realized.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.