Nonequilibrium pulsed femtosecond semiconductor disk laser
US10122150B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2017 |
| Grant date | Nov 6, 2018 |
| Priority date | — |
| Expiry date | Nov 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface-emitting semiconductor laser system contains at least one MQW unit of at least three constituent QWs, axially separated from one another substantially non-equidistantly. The MQW unit is located within the axial extent covered, in operation of the laser, by a half-cycle of the standing wave of the field at a wavelength within the gain spectrum of the gain medium; immediately neighboring nodes of the standing wave are on opposite sides of the MQW unit. So-configured MQW unit can be repeated multiple times and/or complemented with individual QWs disposed outside of the half-cycle of the standing wave with which such MQW unit is associated. The semiconductor laser further includes a pump source configured to input energy in the semiconductor gain medium and a mode-locking element to initiate mode-locking.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.