Patent · US Active

Imprint lithography template and method for zero-gap imprinting

US10124529B2 · kind B2 · utility

0Cited by
9References
11Claims
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Key dates

Filing dateDec 10, 2014
Grant dateNov 13, 2018
Priority date
Expiry dateNov 3, 2036

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB29L2007/001
  • WIPO fieldOther special machines
  • WIPO sectorMechanical engineering

Abstract

Imprint lithography templates having leading and trailing edge borders are provided that achieve zero-gap imprinting between adjacent fields with full-feature height features provided in the pattern exclusion zones (PEZ) located between such fields. The leading edge borders include dummy features, e.g., elongated features directionally oriented parallel to the mesa edge, while the trailing edge border includes a recess extending to the mesa edges. When used in a step-and-repeat process, the trailing edge border overlaps edge portions of an adjacent imprinted field that were previously patterned by the leading edge border of the template, producing full-feature height features in the pattern exclusion zones between such fields, and avoiding gaps or open areas between such fields that otherwise lead to non-uniformity of downstream processes such as etch processes and CMP.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.