Method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace
US10125430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2014 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jan 4, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon cylinder by growth on seeds in a directed solidification furnace, including at least the following steps: (i) providing a crucible having a longitudinal axis (Z), in which the bottom is covered with a layer of seeds of monocrystalline silicon in a right prism shape; and (ii) proceeding with directed solidification of silicon by growth on seeds, in a direction of growth that is co-linear with the axis (Z) and with a concave solidification front, spatially or temporally; characterized in that the layer in step (i) of: one or more central seeds Gc; and one or more peripheral seeds Gp contiguous to the seed(s) Gc, the peripheral seeds Gp having a specific size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.