Method of growing germanium crystals
US10125431B2 · kind B2 · utility
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5References
7Claims
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Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jul 12, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/08
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In accordance with the present invention, taught is a high purity germanium crystal growth method utilizing a quartz shield inside a steel furnace. The quartz shield is adapted for not only guiding the flow of an inert gas but also preventing the germanium melt from contamination by insulation materials, graphite crucible, induction coil and stainless steel chamber. A load cell provides automatic control of crystal diameter and helps to ensure exhaustion of the germanium melt. The method is both convenient and effective at producing high purity germanium crystals by relatively low skilled operators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.