Semiconductor device burn-in temperature sensing
US10126177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2015 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Sep 20, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2874
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A remote diode temperature sensing circuit for use in a burn-in system to sense a temperature of a semiconductor device under test includes a temperature sense circuit and an adapter circuit. The temperature sense circuit is configured to output temperature sense currents (Is) during a temperature sense routine. The adapter circuit is configured to drive mirrored sense currents (Ims), which mirror the temperature sense currents, through a diode of the semiconductor device that is connected to an input/output package pin, and present voltage differences across the diode responsive to the mirrored sense currents to the temperature sense circuit. The temperature sense circuit is configured to discharge a temperature output signal that is indicative of the temperature of the diode based on the voltage differences.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.