Anti-ESD photomask and method of forming the same
US10126643B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jun 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05F1/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.