Method for synthesis of two-dimensional dichalcogenide semiconductors
US10128109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Sep 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to methods of making a transition metal dichalcogenide. The methods can include a step of depositing a transition metal onto a substrate to form an epitaxial transition metal layer. The methods can also include a step of depositing a chalcogen onto the epitaxial transition metal layer, and a step of reacting the chalcogen with the epitaxial transition metal layer to form a transition metal dichalcogenide. In some instances, the chalcogen is reacted with the epitaxial transition metal layer at a temperature of between about 300° C. and 600° C., between about 300° C. and 550° C., between about 300° C. and 500° C., between about 300° C. and 450° C., or between about 300° C. and 400° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.