Semiconductor device and method for manufacturing same
US10128149B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a highly reliable semiconductor device and a method for manufacturing same. The method for manufacturing the semiconductor device includes forming an interlayer insulating film on a semiconductor substrate, forming a conductive plug in the interlayer insulating film, the conductive plug having a top surface for forming the same plane as the top surface of the interlayer insulating film, forming a first titanium film on the interlayer insulating film and the conductive plug, forming an aluminum diffusion-preventing film on the first titanium film, forming a second titanium film on the aluminum diffusion-preventing film, forming an aluminum film on the second titanium film, and shaping the area from the aluminum film to the first titanium film by etching to form wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.