Patent · US Active

Antifuse structure in via hole in interplayer dielectric

US10128184B2 · kind B2 · utility

3Cited by
12References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 1, 2016
Grant dateNov 13, 2018
Priority date—
Expiry dateAug 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/53261
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An antifuse structure includes a first electrode layer, an inter-metal dielectric layer over the first electrode layer, and a via in the inter-metal dielectric layer. The via penetrates through the inter-metal dielectric layer exposing a portion of the first electrode layer. An antifuse layer is deposited in the via and over the portion of the first electrode layer. A second electrode is disposed in the via and over the antifuse layer. An interconnect layer may be deposited over the inter-metal dielectric layer and in electrical contact with the second electrode in the via.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.