Semiconductor devices including active areas with increased contact area
US10128245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Mar 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices may have a first semiconductor element including first active regions that are doped with a first conductivity-type impurity and that are on a semiconductor substrate, a first gate structure between the first active regions, and first contacts connected to the first active regions, respectively; and a second semiconductor element including second active regions that are doped with a second conductivity-type impurity different from the first conductivity-type impurity and that are on the semiconductor substrate, a second gate structure between the second active regions, and second contacts connected to the second active regions, respectively, and having a second length greater than a first length of each of the first contacts in a first direction parallel to an upper surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.