Charge storage cell and method of manufacturing a charge storage cell
US10128292B2 · kind B2 · utility
0Cited by
4References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method can be used to manufacture a charge storage cell with a first trench and a second trench in a substrate material. The first trench is filled with a doped material. The second trench is filled with a second trench material. The method includes causing the dopant to diffuse from the first trench to thereby provide a doped region adjacent to the first trench. The material from the first and second trenches is removed and at least one of the trenches is filled with a capacitive deep trench isolation material to provide capacitive deep trench isolation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.