Semiconductor device
US10128349B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.