Thin film transistor, method for manufacturing the same, array substrate and display device
US10128354B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jan 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a thin film transistor, a method for manufacturing the same, an array substrate and a display device. The method for manufacturing a thin film transistor includes providing a substrate, forming a gate electrode, a gate insulating layer, an amorphous silicon material active layer and a cap layer on the substrate successively, wherein The cap layer is provided with a pattern on a side of the cap layer away from the amorphous silicon material active layer, and the pattern is composed of at least one groove along a length direction of the active layer and at least one groove along a width direction of the active layer, subjecting the amorphous silicon material active layer to laser annealing treatment to transform the amorphous silicon material active layer into a low temperature polycrystalline silicon material active layer, and removing the cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.