Semiconductor device with improved short circuit capability
US10128359B2 · kind B2 · utility
1Cited by
7References
7Claims
0Family size
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Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jan 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device in which short circuit capability can be improved while decline in overall current capability is suppressed. In the semiconductor device, a plurality of IGBTs (insulated gate bipolar transistors) arranged in a row in one direction over the main surface of a semiconductor substrate include an IGBT located at an extreme end in the one direction and an IGBT located more centrally than the IGBT located at the extreme end. The current capability of the IGBT located at the extreme end is higher than the current capability of the IGBT located centrally.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.