Semiconductor device
US10128370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2015 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Nov 4, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A semiconductor device capable of increasing a value of current that flows through the whole chip until a p-n diode in a unit cell close to a termination operates and reducing a size of the chip and a cost of the chip resulting from the reduced size, and including a second well region formed on both sides, as seen in plan view, of the entirety of a plurality of first well regions, a second ohmic electrode located over the second well region, a third separation region of a first conductivity type that is positioned closer to the first well regions than the second ohmic electrode in the second well region and that is formed to penetrate the second well region from a surface layer of the second well region in a depth direction, and a second Schottky electrode located on the third separation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.