Semiconductor structure comprising an absorbing area placed in a focusing cavity

US10128386B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Francois Boulard · Grenoble, FR
• Roch Espiau De Lamaestre · Grenoble, FR
• David Fowler · Boulder, US
• Olivier Gravrand · Saint-Égrève, FR
• Johan Rothman · Grenoble, FR

Key dates

• Filing date: Jun 19, 2013
• Grant date: Nov 13, 2018
• Expiry date: Jun 19, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F71/00

Abstract

A semiconducting structure configured to receive electromagnetic radiation, a method for manufacturing such a structure, and a semiconductor component, the semiconductor structure including: a first semiconducting area of a first type of conductivity, a second semiconducting area of a second type of conductivity opposite to the first type of conductivity, the second area being in contact with the first area to form a semiconducting junction. The second area includes a portion for which a concentration of majority carriers is at least ten times less than a concentration of majority carriers of the first area. The second area and its portion are essentially made in a first cavity configured to focus in the first cavity at least one portion of the electromagnetic radiation.