Optoelectronic component and method for the production thereof
US10128405B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2009 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Nov 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.