Patent · US Active

Optoelectronic component and method for the production thereof

US10128405B2 · kind B2 · utility

1Cited by
5References
14Claims
0Family size

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Inventors

Key dates

Filing dateJun 3, 2009
Grant dateNov 13, 2018
Priority date
Expiry dateNov 13, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate (1); B) growing at least one semiconductor layer (2) epitaxially, to produce an operationally active zone; C) applying a metallic mirror layer (3) to the semiconductor layer (2); D) applying at least one contact layer (8) for electronic contacting of the component; E) detaching the growth substrate (1) from the semiconductor layer (2), so exposing a surface of the semiconductor layer (2); and F) structuring the semiconductor layer (2) by means of an etching method from the side of the surface which was exposed in method step E).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.