Method of manufacturing a multi-layer PZT microactuator using wafer-level processing
US10128431B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2015 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Jun 8, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A multi-level piezoelectric actuator is manufactured using wafer level processing. Two PZT wafers are formed and separately metallized for electrodes. The metallization on the second wafer is patterned, and holes that will become electrical vias are formed in the second wafer. The wafers are then stacked and sintered, then the devices are poled as a group and then singulated to form nearly complete individual PZT actuators. Conductive epoxy is added into the holes at the product placement step in order to both adhere the actuator within its environment and to complete the electrical via thus completing the device. Alternatively: the first wafer is metallized; then the second wafer having holes therethrough but no metallization is stacked and sintered to the first wafer; and patterned metallization is applied to the second wafer to both form electrodes and to complete the vias. The devices are then poled as a group, and singulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.