Substituted 1,2,3-triylidenetris(cyanomethanylylidene) cyclopropanes for VTE, electronic devices and semiconducting materials using them
US10128442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2015 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided are processes for preparing an electrically doped semiconducting material that includes a [3]-radialene p-dopant. Also provided are processes for preparing an electronic device containing a layer that includes a [3]-radialene p-dopant. The processes may include (i) loading an evaporation source with a [3]-radialene p-dopant and (ii) evaporating the [3]-radialene p-dopant at an elevated temperature and at a reduced pressure. The [3]-radialene p-dopant may be selected from compounds having a structure according to formula (I) herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.