Patent · US Active

Vertical cavity surface emitting laser

US10128636B2 · kind B2 · utility

2Cited by
6References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 31, 2016
Grant dateNov 13, 2018
Priority date
Expiry dateMay 31, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/173
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

The invention relates to a Vertical Cavity Surface Emitting Laser (100) comprising a first electrical contact (105), a substrate (110), a first Distributed Bragg Reflector (115), an active layer (120), a second Distributed Bragg Reflector (130) and a second electrical contact (135). The Vertical Cavity Surface Emitting Laser comprises at least one AlyGa(1-y)As-layer with 0.95≤y≤1 with a thickness of at least 40 nm, wherein the AlyGa(1-y )As-layer is separated by means of at least one oxidation control layer (119, 125b). The invention further relates to a laser device (300) comprising such a VCSEL (100) preferably an array of such a VCSELs (100) which are driven by an electrical driving circuit (310). The invention also relates to a method of manufacturing such a VCSEL (100).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.