Vertical cavity surface emitting laser
US10128636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 31, 2016 |
| Grant date | Nov 13, 2018 |
| Priority date | — |
| Expiry date | May 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a Vertical Cavity Surface Emitting Laser (100) comprising a first electrical contact (105), a substrate (110), a first Distributed Bragg Reflector (115), an active layer (120), a second Distributed Bragg Reflector (130) and a second electrical contact (135). The Vertical Cavity Surface Emitting Laser comprises at least one AlyGa(1-y)As-layer with 0.95≤y≤1 with a thickness of at least 40 nm, wherein the AlyGa(1-y )As-layer is separated by means of at least one oxidation control layer (119, 125b). The invention further relates to a laser device (300) comprising such a VCSEL (100) preferably an array of such a VCSELs (100) which are driven by an electrical driving circuit (310). The invention also relates to a method of manufacturing such a VCSEL (100).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.