MOS capacitor optical modulator with transparent conductive and low-refractive-index gate
US10133098B2 · kind B2 · utility
3Cited by
3References
20Claims
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Key dates
| Filing date | Apr 17, 2015 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0151
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.