Methods of growing CdTe-based materials at high rates
US10134590B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Mar 27, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Mar 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02568
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for growing high-quality CdTe-based materials at high growth rates are provided. According to an aspect of the invention, a method includes depositing a first CdTe-based layer on a CdTe-based template at a rate of greater than 1 μm/min. Each of the first CdTe-based layer and the CdTe-based template has a single-crystal structure and/or a large-grain polycrystalline structure. The depositing is performed by physical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.