Semiconductor device and method for manufacturing same
US10134593B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 5, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate having a cell region with a semiconductor element and an outer peripheral region; and a drift layer on the substrate. The semiconductor element includes a base region, a source region, a trench gate structure, a deep layer deeper than a gate trench, a source electrode, and a drain electrode. The outer peripheral region has a recess portion in which the drift layer are exposed, and a guard ring layer. The guard ring layer includes multiple guard ring trenches having a frame shape, surrounding the cell region and arranged on an exposed surface of the drift layer, and a first guard ring in the guard ring trenches. Each of the linear deep trenches has a width equal to a width of each of the linear guard ring trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.