Method of forming patterns and method of manufacturing integrated circuit device using the same
US10134606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2015 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | May 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming patterns may use an organic reflection-preventing film including a polymer having an acid-liable group. A photoresist film is formed on the organic reflection-preventing film. A first area selected from the photoresist film is exposed to generate an acid in the first area. Hydrophilicity of a first surface of the organic reflection-preventing film facing the first area of the photoresist film may be increased. The photoresist film including the exposed first area is developed to remove a non-exposed area of the photoresist film. The organic reflection-preventing film and a target layer are anisotropically etched by using the first area of the photoresist film as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.