Shallow trench isolation structure and fabricating method thereof

US10134625B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Beijing) Corporation · CN
• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

• Hao Deng · Shanghai, CN
• Yan Yan · Shanghai, CN
• Jun Yang · Oak Ridge, US
• Tingting Peng · Shanghai, CN

Key dates

• Filing date: Aug 26, 2016
• Grant date: Nov 20, 2018
• Expiry date: Aug 26, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In accordance with various embodiments of the disclosed subject matter, a shallow trench isolation structure and a fabricating method thereof are provided. The method for forming the shallow trench isolation structure may include: providing a semiconductor substrate; forming a shallow trench in the semiconductor substrate; forming a first insulating layer on a surface of the semiconductor substrate and in the shallow trench, a portion of the first insulating layer in the shallow trench includes an opening; etching the first insulating layer to increase a width of the opening; after etching the first insulating layer, performing a plasma treatment to an exposed surface of the first insulating layer; after the plasma treatment, cleaning the surface of the first insulating layer; and after cleaning the surface of the first insulating layer, filling a second insulating layer into the shallow trench.