High power transistors
US10134658B2 · kind B2 · utility
3Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Aug 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/49111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High power transistors, such as high power gallium nitride (GaN) transistors, are described. These high power transistors have larger total gate widths than conventional high power transistors by arranging multiple linear arrays of gate, drain, and source contacts in parallel. Thereby, the total gate width and the power rating of the high power transistor may be increased without elongating the die of the high power transistor. Accordingly, the die of the high power transistor may be mounted in a smaller circuit package relative to conventional dies with the same power rating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.