Semiconductor device
US10134665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2015 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jul 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A BGA 9 includes a wiring substrate 2, a semiconductor chip 1 fixed on the wiring substrate 2, a sealing body 4 that seals the semiconductor chip 1, and a plurality of solder balls 5 provided on a lower surface of the wiring substrate 2. A degree of flatness of an upper surface 2ia of a first wiring layer 2i of the wiring substrate 2 of the BGA 9 is lower than a degree of flatness of a lower surface 2ib, and a first pattern 2jc provided in a second wiring layer 2j is arranged at a position overlapping a first pattern 2ic provided in the first wiring layer 2i. Also, an area of the first pattern 2ic provided in the first wiring layer 2i is larger than an area of a plurality of (for example, two) second patterns 2jd provided in the second wiring layer 2j in a plan view, and a first opening portion 2jm through which a part of a second insulating layer 2h is exposed is formed in the first pattern 2jc provided in the second wiring layer 2j.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.