Method of manufacturing semiconductor device
US10134705B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Nov 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. In addition, the method of manufacturing a semiconductor device includes a step of, after the first step, applying the ultrasonic waves to the ball portion while pressing the ball portion with a second load larger than the first load, thereby bonding the ball portion and the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.