Heterogeneously integrated semiconductor device and manufacturing method thereof
US10134735B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jun 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
Abstract
A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.