Semiconductor device and method for fabricating the same
US10134740B2 · kind B2 · utility
4Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jul 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0217
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a substrate; a trench formed within the substrate; a gate insulating film formed conformally along a portion of a surface of the trench; a gate electrode formed on the gate insulating film and filling a portion of the trench; a capping film formed on the gate electrode and filling the trench; and an air gap formed between the capping film and the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.