Oxide semiconductor TFT array substrate and method for manufacturing the same
US10134765B2 · kind B2 · utility
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Key dates
| Filing date | Jun 1, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jun 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6746
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an oxide semiconductor TFT array substrate is provided, which including: successively depositing an oxide semiconductor active layer and a transparent conductive layer on a base substrate without breaking vacuum; and forming patterns of an active layer and a transparent conductive layer. An oxide semiconductor TFT array substrate is further provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.