Image sensor and fabrication method therefor
US10134790B1 · kind B1 · utility
8Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 17, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | May 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.