Backside illumination global shutter sensor and pixel thereof
US10134791B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Dec 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A backside illumination global shutter pixel is disposed in a substrate having a first surface and a second surface and includes an isolation structure having a deep trench isolation pattern, a storage node, and a photoelectric conversion element. The deep trench isolation pattern has a channel and defines a first region and a second region connected with each other by the channel. The storage node is disposed in the second region. The photoelectric conversion element has a main photoelectric conversion portion disposed in the first region and an extending photoelectric conversion portion extended from the main photoelectric conversion portion through the channel to the second region. The extending photoelectric conversion portion is disposed between the second surface and the storage node. A backside illumination global shutter sensor including a plurality of backside illumination global shutter pixels is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.