Semiconductor light emitting device
US10134806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jun 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.