Semiconductor device and method of manufacturing the same
US10134832B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first conductivity type drift region having crystal defects generated by electron-beam irradiation; a first main electrode region of a first conductivity type arranged in the drift region and having an impurity concentration higher than that of the drift region; and a second main electrode region of a second conductivity type arranged in the drift region to be separated from the first main electrode region, wherein the crystal defects contain a first composite defect implemented by a vacancy and oxygen and a second composite defect implemented by carbon and oxygen, and a density of the crystal defects is set so that a peak signal intensity of a level of the first composite defect identified by a deep-level transient spectroscopy measurement is five times or more than a peak signal intensity of a level of the second composite defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.