Organic light emitting diode display having thin film transistor substrate using oxide semiconductor
US10134877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an organic light emitting diode (OLED) display can include forming a gate electrode on a substrate, forming a semiconductor layer by depositing a gate insulating layer and an oxide semiconductor material and patterning the oxide semiconductor material, forming an etch stopper on a central portion of the semiconductor layer, conducting a plasma treatment using the etch stopper as a mask to conductorize portions of the semiconductor layer exposed by the etch stopper for defining a channel area, a source area and a drain area, and forming a source electrode contacting portions of the conductorized source area and a drain electrode contacting portions of the conductorized drain area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.