Silicon carbide semiconductor device
US10134920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2016 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mesa type p-n junction diode silicon carbide semiconductor device that includes a first silicon carbide semiconductor substrate, a first drift layer formed on the silicon carbide semiconductor substrate, a second anode layer formed on the drift layer, a mesa structure having a flat mesa bottom portion formed in an outer periphery thereof and having a mesa side wall obliquely formed with respect to a top face of the anode layer in a cross-section ranging from the anode layer to the drift layer, a second lightly doped region formed from an edge of the anode layer to the mesa bottom portion, and a second highly doped region formed on the side of the mesa side wall in the lightly doped region in contact with the edge of the anode layer and in a portion connected to the mesa bottom portion at a lower part of the mesa side wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.