Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an electronic or optoelectronic device and electronic or optoelectronic device

US10134943B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Bernd Barchmann · Regensburg, DE
• Fabian Eigenmann · Regensburg, DE
• Andreas Ploessl · Regensburg, DE

Key dates

• Filing date: Nov 30, 2015
• Grant date: Nov 20, 2018
• Expiry date: Nov 30, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: —providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), —depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometers and 250 nanometers, inclusive, —applying the wafer (1) to a film (11), —at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and —breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.