Light emitting device and method of fabricating the same
US10134947B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2018 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jan 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.