Enhanced conduction for p-channel device
US10135333B1 · kind B1 · utility
1Cited by
2References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 6, 2014 |
| Grant date | Nov 20, 2018 |
| Priority date | — |
| Expiry date | Jan 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A technique for enhancing the conduction of a p-channel device is disclosed. Specifically, a negative charge pump is configured to provide a gate drive voltage to a p-channel device. The negative charge pump creates a negative voltage potential below ground and facilitates increased gate drive for the p-channel device. The gate drive voltage output by the negative charge pump may be selected such that it is optimal for the p-channel device operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.