Single-crystal silicon-carbide substrate and polishing solution
US10138397B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
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Inventors
Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jun 15, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.