Mechanically gated electrical switches by creasing of patterned metal/elastomer bilayer films
US10138542B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2015 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | May 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H1/0036
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Strain-gated logic devices are important for the development of advanced flexible electronics. Using a dual-monolayer-promoted film-transfer technique, a flexible multilayer structure capable of undergoing large compressive deformation was prepared. Formation of a crease in the gap between electrodes at a geometrically tunable strain leads to formation of an electrical connection in a reversible and reproducible fashion. A strain-gated electrical switch includes at least two conductive electrodes disposed on a surface of an elastomer substrate, the at least two conductive electrodes forming a gap between the at least two electrodes in an off-state of the strain-gated electrical switch, the gap diminishing under compressive strain to form a crease, the compressive strain pressing the at least two electrodes into contact with each other in an on-state of the strain-gated electrical switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.