Patent · US Active

Sputtering target

US10138544B2 · kind B2 · utility

0Cited by
53References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2012
Grant dateNov 27, 2018
Priority date
Expiry dateJan 12, 2034

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB22D25/06
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A method for casting a reactive material PVD target, as well as targets thus obtained and a mold for casting. The method includes providing a mold defining an opening, placing a reactive material ingot in to a reservoir (140) proximate the mold, forming a vacuum and melting the reactive material in the reservoir, heating the mold to above a casting temperature and forming a vacuum therein, introducing molten reactive material from the reservoir into the opening and cooling the mold to form the PVD target.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.