Patent · US Active

Process for the removal of contaminants from sputtering target substrates

US10138545B2 · kind B2 · utility

0Cited by
6References
18Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 2, 2017
Grant dateNov 27, 2018
Priority date
Expiry dateMay 22, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC11D2111/46
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The present invention provides a process for the removal of contaminants on a spent sputtering target used in Plasma Vapor Deposition by the steps of grit abrasion, organic solvent cleaning, and being subjected to an electric field in an acidic bath including a surfactant, and followed by subsequent water and air rinse and further grit abrasion. Removal of the contaminants is verified by spectroscopy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.